Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Design & Test
سال: 2019
ISSN: 2168-2356,2168-2364
DOI: 10.1109/mdat.2019.2902094